IMPORTANT NOTICE: READ CAREFULLY BEFORE PROCEEDING

The technical specifications, schematics, component lists, and laboratory descriptions detailed on this website describe a high-voltage, high-frequency solid-state switching engine (Module 1 and Module 2) operating in the 300V to 600V DC range with rapid, nanosecond transient rise times (dV/dt > 40\text{ V/ns}).

This documentation is published strictly for educational, historical replication, open-source community review, and scientific research purposes. High-voltage circuits and high-frequency electrodynamic fields are inherently dangerous. Working with these systems carries significant risks of severe electrical shock, permanent physical injury, arc flash burns, electrocution, death, and property damage or destruction due to electrical fires.

IF YOU DO NOT AGREE TO ALL OF THESE TERMS, OR IF YOU LACK THE PROFESSIONAL TRAINING AND TEST EQUIPMENT REQUIRED TO SAFELY HANDLE 600V HIGH-FREQUENCY TRANSIENT CIRCUITS, YOU ARE NOT AUTHORIZED TO ATTEMPT REPLICATION OF THIS HARDWARE.

This document provides the functional assembly layout, component specifications, and subsystem routing for the open-source RDC-SS reference design. This guide structures the system into two isolated hardware modules to preserve signal integrity and implement industrial-grade safety barriers.

The RDC-SS functions by staging electrical energy into a high-voltage reservoir, discharging it across a wide-bandgap semiconductor switch at nanosecond speeds, and capturing the resulting inductive or spatial field reaction to route back to the power reservoir.

The system uses standard inductive energy recovery mechanics modernized with wide-bandgap components. When the fast transient switch opens, the collapsing field generates a high-voltage flyback pulse. Rather than dissipating this pulse as heat, a high-speed diode network steers the energy back to the source bank.

To achieve a 10-nanosecond switching edge without component degradation, specific high-frequency parts must be utilized. Standard components will fail under continuous high-dV/dt stress.

Subsystem

Component Description

Recommended Part / Spec

Purpose

Module 1

Microcontroller

Arduino Nano (ATmega328P)

Generates the base PFM/PWM timing wave.

Module 1

Manual Throttle

Bourns 91 Series 10 kΩ Linear Potentiometer

Provides manual, EMI-immune frequency control.

Module 1

DC-DC Step-Up

Isolated Push-Pull or Flyback Converter Module

Boosts 12V DC input up to 300V–600V DC.

Module 2

Power Switch

1200V, 30A Silicon Carbide (SiC) MOSFET

Executes high-speed nanosecond switching.

Module 2

Gate Driver

Texas Instruments UCC217xx (or similar)

Optically or capacitively isolated gate driver.

Module 2

Driver Bias Supply

12V to +15V/-5V Asymmetric DC-DC Isolated Converter

Provides clean, negative turn-off bias to the SiC gate.

Module 2

Storage Bank

450V–600V Low-ESR Polypropylene Film Capacitors

Serves as the primary pulse-delivery reservoir.

Recycling Loop

Recovery Diodes

1200V SiC Schottky Rectifier Diodes

Steers high-voltage inductive kickback to the source.

Module 1 houses the low-voltage control circuits and the step-up voltage booster. It must be built inside a separate enclosure from the main switching engine.

1. Mount the Arduino Nano onto a secure PCB layout or proto-board.
2. Wire the 10 kΩ Linear Potentiometer to the Arduino:

• Connect Terminal 1 to the Arduino GND pin.
• Connect Terminal 2 (Wiper) to the Arduino Analog Input pin A0.
• Connect Terminal 3 to the Arduino regulated +5V or +3.3V pin.

1. Secure the potentiometer directly to the front face of the enclosure, ensuring the metal housing of the potentiometer is bonded to the local box ground.

1. Wire the 12V DC input from your source battery terminals through an inline 20A fuse and a heavy-duty toggle switch.
2. Route this fused 12V line to the input of the DC-DC Step-Up Converter module.
3. Connect the output of the step-up converter to an internal trimmer potentiometer to allow manual calibration of the high-voltage bus between 300V and 600V DC.
4. Route the high-voltage output lines directly to a dedicated, touch-safe high-voltage output terminal block.

Module 2 must be built inside a fully enclosed die-cast aluminum box (1.5mm to 3mm wall thickness) to act as a Faraday cage against Radio Frequency Interference (RFI).

1. Drill holes for a 4-pin GX16 Metal Aviation Connector (Logic Input) and two heavy-duty high-voltage feedthrough terminals.
2. Scrape away any anodizing or paint around the inside of the drilled holes to ensure absolute metal-on-metal contact between the connectors, the box, and the internal grounding stud.

1. Mount the isolated gate driver chip on the PCB.
2. Feed the incoming control pulse from the GX16 connector directly into the primary (low-voltage) input pins of the driver chip.
3. Power the secondary (high-voltage) side of the gate driver using the asymmetric +15V/-5V isolated DC-DC supply. This negative voltage rail is required to lock the SiC MOSFET completely closed during off-states, preventing false triggers caused by transient noise.

1. Mount the SiC MOSFET to an internal aluminum heatsink using an electrically non-conductive, thermally high-performing ceramic pad (Sil-Pad or Alumina insulator).
2. Connect the Low-ESR Polypropylene Capacitor Bank directly across the positive and negative high-voltage input lines. Place these capacitors as close to the SiC MOSFET pins as physically possible to minimize stray circuit inductance.
3. Connect the Source pin of the MOSFET to the high-voltage negative rail. Connect the Drain pin to your external load output terminal.

The energy recycling system captures the high-voltage inductive kickback produced when the SiC MOSFET opens, steering that energy back into the primary power bank.

Installation Steps:

1. Connect an array of 1200V SiC Schottky Diodes in parallel across the output terminal loop.
2. Wire the Anode of the recovery diode array directly to the high-voltage output line leading from the MOSFET's Drain.
3. Wire the Cathode of the recovery diode array to a dedicated high-voltage return line that routes out of Module 2 via shielded cabling.
4. Connect this return line directly back to the positive terminal of your primary 12V battery bank (or a secondary matching recovery battery bank). Because SiC Schottky diodes feature zero reverse recovery time, they snap open instantly, trapping the transient voltage peak and steering it into the battery reservoir before it can convert into heat.

1. Connect Module 1 and Module 2 using a Shielded Twisted Pair (STP) cable for logic commands and a Shielded 18 AWG High-Voltage Cable for the DC power link.
2. Ensure the internal braided copper shields of both cables are tightly clamped and grounded to the aluminum chassis of Module 2 at the entry point.
3. Turn-On Sequence: Turn on the 12V logic power to Module 1 first with the potentiometer turned completely counter-clockwise (0 Hz / Dead Stop).
4. Verify via your display screen that the microcontroller is reading the analog dial accurately. Once logic stability is verified, close the high-voltage safety links to initialize testing across your dielectrics or specialized test bench loads.